RAM + HDD equal MRAM
Oct. 2nd, 2025 06:17 pm![[personal profile]](https://www.dreamwidth.org/img/silk/identity/user.png){kind=small}
frozen_catНовости принeсли одну статью по MRAM
Выложу из загашников несколько ссылок
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Что такое MRAM? Это синтез лучших качеств DRAM и NAND. Кто не знает что значат все эти буквы, для тех совсем просто: это правильная компьютерная память -- без провалов, тормозов и забывчивости; о такой в прошлом можно было лишь тайно мечтать, читая научную фантастику. Это компьютеры без перезагрузок (хотя программисты иначе уже не умеют), которые включаются и выключаются мгновенно, не теряя текущее состояние и информацию. Эту технологию уже успели лицензировать ARM.
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via https://ardelfi.livejournal.com/34729.html
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Everspin’s Spin-transfer Torque (STT) MRAM technology uses the spin-transfer torque property, which is the manipulation of the spin of electrons with a polarizing current, to establish the desired magnetic state of a magnetic tunnel junction (MTJ).
STT-MRAM delivers a significant reduction in switching energy compared to our Toggle MRAM. It is highly scalable, enabling higher density memory products. Everspin STT-MRAM uses a perpendicular MTJ with high perpendicular magnetic anisotropy, providing long data retention, small cell size, greater density, high endurance, and low power. In a write operation, the direction of the polarizing current passing through the MTJ will determine the magnetic state of the free layer. When parallel to the fixed layer, the MTJ is in a low resistance state and when anti-parallel, it is in a high resistance state, effectively providing an equivalent of a bit cell in a logic one or zero state.
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via https://www.everspin.com/spin-transfer-torque-mram-technology
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The future of MRAM
There are a number of near-term and long-term developments in the works for MRAM. Mobile cache, in which MRAM would replace both flash and SRAM, could be in the market within the next year or two, according to IBM’s Worledge. “From the research and development point of view, I think we’re done. We’ve demonstrated the magnetic tunnel junctions that can meet these requirements, and we’re hoping the foundries will offer a commercial offering soon.”
Fig. 3: Standalone MRAM and embedded non-volatile MRAM are already in the market. Mobile cache MRAM and last-level cache MRAM are in development. Source: IBM
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via https://semiengineering.com/mram-getting-more-attention-at-smallest-nodes/
Выложу из загашников несколько ссылок
"
...
Что такое MRAM? Это синтез лучших качеств DRAM и NAND. Кто не знает что значат все эти буквы, для тех совсем просто: это правильная компьютерная память -- без провалов, тормозов и забывчивости; о такой в прошлом можно было лишь тайно мечтать, читая научную фантастику. Это компьютеры без перезагрузок (хотя программисты иначе уже не умеют), которые включаются и выключаются мгновенно, не теряя текущее состояние и информацию. Эту технологию уже успели лицензировать ARM.
..."
via https://ardelfi.livejournal.com/34729.html
"
...
Everspin’s Spin-transfer Torque (STT) MRAM technology uses the spin-transfer torque property, which is the manipulation of the spin of electrons with a polarizing current, to establish the desired magnetic state of a magnetic tunnel junction (MTJ).
STT-MRAM delivers a significant reduction in switching energy compared to our Toggle MRAM. It is highly scalable, enabling higher density memory products. Everspin STT-MRAM uses a perpendicular MTJ with high perpendicular magnetic anisotropy, providing long data retention, small cell size, greater density, high endurance, and low power. In a write operation, the direction of the polarizing current passing through the MTJ will determine the magnetic state of the free layer. When parallel to the fixed layer, the MTJ is in a low resistance state and when anti-parallel, it is in a high resistance state, effectively providing an equivalent of a bit cell in a logic one or zero state.
...
"
via https://www.everspin.com/spin-transfer-torque-mram-technology
"
...
The future of MRAM
There are a number of near-term and long-term developments in the works for MRAM. Mobile cache, in which MRAM would replace both flash and SRAM, could be in the market within the next year or two, according to IBM’s Worledge. “From the research and development point of view, I think we’re done. We’ve demonstrated the magnetic tunnel junctions that can meet these requirements, and we’re hoping the foundries will offer a commercial offering soon.”
Fig. 3: Standalone MRAM and embedded non-volatile MRAM are already in the market. Mobile cache MRAM and last-level cache MRAM are in development. Source: IBM
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via https://semiengineering.com/mram-getting-more-attention-at-smallest-nodes/
